SLOW RAMP VOLTAGE TECHNIQUE FOR INVESTIGATION OF BREAKDOWN VOLTAGE DISTRIBUTION IN THIN PLASMA- NITRIDED SiO2 FILMS
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چکیده
This version is made available in accordance with publisher policies. Please cite only the published version using the reference above. The slow ramp current-voltage characteristics of NH3-plasma-nitrided samples of thermally grown chlorine SiO2, d = 200-350 ~, have been measured and the breakdown voltage statistics determined. The characteristics of the breakdown voltage distribution of a double layer and completely nitrided samples have been derived. Evidence is given that the dominant conductivity mechanism is contact-limited Fowler-Nordheim emission.
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تاریخ انتشار 2002